Samsung has produced and launched a new line of the Z-SSDs which dominates its Z-NAND flash memory chips and has a 1.5gb RAM cache for high performance, ultra-low latency and high reliability. The SZ985 800GB PCIe Z-SSD will put a target on the storage needs of big data, artificial intelligence (AI) and the Internet of Things (IoT) applications.
This high-end SSD is a single-port, four-lane device. Samsung Z-NAND is said to provide “10 times higher cell read performance than 3-bit V-NAND chips”, and is accompanied on the SZ985 by 1.5GB LPDDR4 DRAM and a high-performance controller. This brings to memory the kind of top-quality this is, Jinman Han, SVP Memory Product Planning & Application Engineering at Samsung, said the leading-edge 800GB Z-SSD is likely to be deployed in “next-generation supercomputing systems in the near future”. Han added that Samsung would continue to push density to lead in the premium SSD market.
In performance metrics provided, Samsung says that the SZ985 offers a random read performance of 750K IOPS, random write speeds of up to 170K IOPS, and a write latency of 16 microseconds. Durability and reliability are also of great importance in storage devices and Samsung guarantees up to 30 drive writes per day (DWPD) for five years, or a total of 42 petabytes. The MTBF figure is two million hours. As a comparative reminder, the Intel Optane SSD DC P4800X Series offers 550K random read and write IOPS.
This Samsung SZ985 SSD will be arriving in the 800gb capacity mentioned earlier and also in a 240GB version, as a PCIe add-in card using a 4x PCIe 3.0 interface. Hardware will be on show at the ISSCC 2018 (International Solid-State Circuits Conference), in San Francisco, from 11- 15th February.